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Formation of ternary Ni-silicide on relaxed and strained SiGe layers

Date

2004
Journal article
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dc.contributor.authorZhao, Q.T.
dc.contributor.authorBuca, D.
dc.contributor.authorLenk, S.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMantl, S.
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T18:16:46Z
dc.date.available2021-10-15T18:16:46Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9981
dc.source.beginpage285
dc.source.endpage289
dc.source.issue1_4
dc.source.journalMicroelectronic Engineering
dc.source.volume76
dc.title

Formation of ternary Ni-silicide on relaxed and strained SiGe layers

dc.typeJournal article
dspace.entity.typePublication
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