Analytical model and Monte Carlo simulations for phosphorus implantation in germanium including ion channeling

dc.contributor.author	Hellings, Geert
dc.contributor.author	Eneman, Geert
dc.contributor.author	Meuris, Marc
dc.contributor.author	De Meyer, Kristin
dc.contributor.imecauthor	Hellings, Geert
dc.contributor.imecauthor	Eneman, Geert
dc.contributor.imecauthor	Meuris, Marc
dc.contributor.imecauthor	De Meyer, Kristin
dc.contributor.orcidimec	Hellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimec	Eneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimec	Meuris, Marc::0000-0002-9580-6810
dc.date.accessioned	2021-10-17T07:35:11Z
dc.date.available	2021-10-17T07:35:11Z
dc.date.issued	2008
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/13852
dc.source.beginpage	253
dc.source.conference	International Conference on Simulation of Semiconductor Processes and Devices - SISPAD
dc.source.conferencedate	9/09/2008
dc.source.conferencelocation	Hakone Japan
dc.source.endpage	256
dc.title	Analytical model and Monte Carlo simulations for phosphorus implantation in germanium including ion channeling
dc.type	Proceedings paper
dspace.entity.type	Publication
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