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Sub-20nm gate length p-FinFETs device performance improvement using TEM/EDX and NBD based TCAD calibrations.
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Sub-20nm gate length p-FinFETs device performance improvement using TEM/EDX and NBD based TCAD calibrations.
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Date
2023-09
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Eyben, Pierre
;
De Keersgieter, An
;
Matagne, Philippe
;
Chiarella, Thomas
;
Porret, Clément
;
Hikavyy, Andriy
;
Siew, Yong Kong
;
Goux, Ludovic
;
Mitard, Jerome
;
Horiguchi, Naoto
Journal
N/A
Abstract
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221
since deposited on 2023-07-18
3
last month
Acq. date: 2025-12-17
Citations
Metrics
Views
221
since deposited on 2023-07-18
3
last month
Acq. date: 2025-12-17
Citations