Publication:

Sub-20nm gate length p-FinFETs device performance improvement using TEM/EDX and NBD based TCAD calibrations.

Date

2023-09
Proceedings Paper
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dc.contributor.authorEyben, Pierre
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMatagne, Philippe
dc.contributor.authorChiarella, Thomas
dc.contributor.authorPorret, Clément
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorSiew, Yong Kong
dc.contributor.authorGoux, Ludovic
dc.contributor.authorMitard, Jerome
dc.contributor.authorHoriguchi, Naoto
dc.contributor.imecauthorEyben, Pierre
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMatagne, Philippe
dc.contributor.imecauthorChiarella, Thomas
dc.contributor.imecauthorPorret, Clément
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSiew, Yong Kong
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecEyben, Pierre::0000-0003-3686-556X
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecChiarella, Thomas::0000-0002-6155-9030
dc.contributor.orcidimecPorret, Clément::0000-0002-4561-348X
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecMatagne, Philippe::0000-0003-0365-2066
dc.contributor.orcidimecSiew, Yong Kong::0009-0004-1634-4163
dc.date.accessioned2025-05-14T06:54:03Z
dc.date.available2023-07-18T15:28:00Z
dc.date.available2025-05-14T06:54:03Z
dc.date.issued2023-09
dc.identifier.issn0021-4922
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42171
dc.publisherIEEE
dc.source.conferenceInternational Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate5 - 8 September 2023
dc.source.conferencelocationNagoya
dc.source.journalN/A
dc.source.numberofpages2
dc.subject.disciplinePhysics
dc.subject.keywordsFinFET
dc.subject.keywordsTCAD
dc.subject.keywordsTEM/EDX
dc.title

Sub-20nm gate length p-FinFETs device performance improvement using TEM/EDX and NBD based TCAD calibrations.

dc.typeProceedings paper
dspace.entity.typePublication
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