Publication:

Effective reduction of interfacial traps in Al2O3 /GaAs(001) gate stacks using surface engineering and thermal annealing

Date

2010
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-3084-2543
cris.virtualsource.department77d06c14-6a7b-4d80-9c75-962dea483414
cris.virtualsource.orcid77d06c14-6a7b-4d80-9c75-962dea483414
dc.contributor.authorChang, Yao-Chung
dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorLu, Chung-Yu
dc.contributor.authorWang, Wei-E
dc.contributor.authorDekoster, Johan
dc.contributor.authorMeuris, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorKwo, Raynien
dc.contributor.authorHong, Minghwei
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorDekoster, Johan
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-18T15:31:21Z
dc.date.available2021-10-18T15:31:21Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16840
dc.source.beginpage112901
dc.source.issue11
dc.source.journalApplied Physics Letters
dc.source.volume97
dc.title

Effective reduction of interfacial traps in Al2O3 /GaAs(001) gate stacks using surface engineering and thermal annealing

dc.typeJournal article
dspace.entity.typePublication
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