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Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Publication:
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Date
2016
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Vais, Abhitosh
;
Sioncke, Sonja
;
Putcha, Vamsi
;
Kaczer, Ben
;
Shie, Bo-Shiuan
;
Shi, Xiaoping
;
Reyhaneh, Mahlouji
;
Nyns, Laura
;
Zhou, Daisy
;
Waldron, Niamh
;
Maes, Jan
;
Xie, Qi
;
Givens, M.
;
Tang, F.
;
Jiang, X.
;
Arimura, Hiroaki
;
Schram, Tom
;
Ragnarsson, Lars-Ake
;
Sibaja-Hernandez, Arturo
;
Hellings, Geert
;
Horiguchi, Naoto
;
Heyns, Marc
;
Groeseneken, Guido
;
Linten, Dimitri
;
Collaert, Nadine
;
Thean, Aaron
Journal
Abstract
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55
since deposited on 2021-10-23
Acq. date: 2025-10-22
Views
1930
since deposited on 2021-10-23
Acq. date: 2025-10-22
Citations
Metrics
Downloads
55
since deposited on 2021-10-23
Acq. date: 2025-10-22
Views
1930
since deposited on 2021-10-23
Acq. date: 2025-10-22
Citations