Skip to content
Institutional repository
Communities & Collections
Browse all items
Scientific publications
Open knowledge
Log In
imec Publications
Conference contributions
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Publication:
Demonstration of an InGaAs gate stack with sufficient PBTI reliability by thermal budget optimization, nitridation, high-k material choice, and interface dipole
Copy permalink
Date
2016
Proceedings Paper
Simple item page
Full metadata
Statistics
Loading...
Loading...
Files
Accepted version
723.45 KB
Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Vais, Abhitosh
;
Sioncke, Sonja
;
Putcha, Vamsi
;
Kaczer, Ben
;
Shie, Bo-Shiuan
;
Shi, Xiaoping
;
Reyhaneh, Mahlouji
;
Nyns, Laura
;
Zhou, Daisy
;
Waldron, Niamh
;
Maes, Jan
;
Xie, Qi
;
Givens, M.
;
Tang, F.
;
Jiang, X.
;
Arimura, Hiroaki
;
Schram, Tom
;
Ragnarsson, Lars-Ake
;
Sibaja-Hernandez, Arturo
;
Hellings, Geert
;
Horiguchi, Naoto
;
Heyns, Marc
;
Groeseneken, Guido
;
Linten, Dimitri
;
Collaert, Nadine
;
Thean, Aaron
Journal
Abstract
Description
Metrics
Downloads
113
since deposited on 2021-10-23
37
last month
6
last week
Acq. date: 2025-12-09
Views
1930
since deposited on 2021-10-23
Acq. date: 2025-12-09
Citations
Metrics
Downloads
113
since deposited on 2021-10-23
37
last month
6
last week
Acq. date: 2025-12-09
Views
1930
since deposited on 2021-10-23
Acq. date: 2025-12-09
Citations