Publication:

Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories

Date

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-7493-9681
cris.virtual.orcid0000-0001-9971-6954
cris.virtual.orcid0000-0003-2869-1651
cris.virtual.orcid0000-0003-1381-6925
cris.virtualsource.departmentd910b17c-774d-4036-8b49-51680f68b5e2
cris.virtualsource.departmentce03ac04-c546-4df1-a775-1c68e533233e
cris.virtualsource.department5a95d7fb-60a3-41d3-9237-399e069d07d9
cris.virtualsource.department39ca1b0f-7306-4c78-a654-f9ff9f4c8183
cris.virtualsource.orcidd910b17c-774d-4036-8b49-51680f68b5e2
cris.virtualsource.orcidce03ac04-c546-4df1-a775-1c68e533233e
cris.virtualsource.orcid5a95d7fb-60a3-41d3-9237-399e069d07d9
cris.virtualsource.orcid39ca1b0f-7306-4c78-a654-f9ff9f4c8183
dc.contributor.authorSuhane, Amit
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorVandelli, Luca
dc.contributor.authorPadovani, Andrea
dc.contributor.authorBreuil, Laurent
dc.contributor.authorLarcher, Luca
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorBreuil, Laurent
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecBreuil, Laurent::0000-0003-2869-1651
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-18T22:05:20Z
dc.date.available2021-10-18T22:05:20Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18053
dc.source.beginpage936
dc.source.endpage938
dc.source.issue9
dc.source.journalIEEE Electron Device Letters
dc.source.volume31
dc.title

Experimental assessment of electrons and holes in erase transient of TANOS and TANVaS memories

dc.typeJournal article
dspace.entity.typePublication
Files

Original bundle

Name:
21012.pdf
Size:
434.13 KB
Format:
Adobe Portable Document Format
Publication available in collections: