Publication:
Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate
Date
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0003-3763-2098 | |
| cris.virtual.orcid | 0000-0001-8434-1838 | |
| cris.virtual.orcid | 0000-0002-6481-2951 | |
| cris.virtual.orcid | 0000-0002-5376-2119 | |
| cris.virtualsource.department | 2fcc3f32-b96b-4ece-a34c-e0dd87c237c9 | |
| cris.virtualsource.department | 63eea5a8-b81a-4bb2-aa67-715ba610971a | |
| cris.virtualsource.department | e0386a23-f2bf-4f53-a36f-c1380bca0db7 | |
| cris.virtualsource.department | cd811942-aea0-4312-8eb5-d9cc179a6b3d | |
| cris.virtualsource.orcid | 2fcc3f32-b96b-4ece-a34c-e0dd87c237c9 | |
| cris.virtualsource.orcid | 63eea5a8-b81a-4bb2-aa67-715ba610971a | |
| cris.virtualsource.orcid | e0386a23-f2bf-4f53-a36f-c1380bca0db7 | |
| cris.virtualsource.orcid | cd811942-aea0-4312-8eb5-d9cc179a6b3d | |
| dc.contributor.author | Chen, Shih-Hung | |
| dc.contributor.author | Linten, Dimitri | |
| dc.contributor.author | Scholz, Mirko | |
| dc.contributor.author | Hellings, Geert | |
| dc.contributor.author | Boschke, Roman | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.author | Huang, S.-H. | |
| dc.contributor.author | Ker, M.-D. | |
| dc.contributor.imecauthor | Chen, Shih-Hung | |
| dc.contributor.imecauthor | Linten, Dimitri | |
| dc.contributor.imecauthor | Hellings, Geert | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
| dc.contributor.orcidimec | Hellings, Geert::0000-0002-5376-2119 | |
| dc.date.accessioned | 2021-10-22T00:55:35Z | |
| dc.date.available | 2021-10-22T00:55:35Z | |
| dc.date.embargo | 9999-12-31 | |
| dc.date.issued | 2014 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/23633 | |
| dc.identifier.url | http://ieeexplore.ieee.org/xpl/articleDetails.jsp?tp=&arnumber=6860651&contentType=Conference+Publications | |
| dc.source.beginpage | 4C.2 | |
| dc.source.conference | IEEE International Reliability Physics Symposium - IRPS | |
| dc.source.conferencedate | 1/06/2014 | |
| dc.source.conferencelocation | Waikoloa, HI USA | |
| dc.title | Improvement on CDM ESD robustness of high-voltage tolerant nLDMOS SCR devices by using differential doped gate | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | Original bundle
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| Publication available in collections: |