Publication:

Extraction of the lateral position of border traps in nanoscale MOSFETs

Date

2015
Journal article
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-1484-4007
cris.virtual.orcid0000-0002-5348-2096
cris.virtualsource.department812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.departmentf3759903-e615-46a5-8efa-11f3aef05ef3
cris.virtualsource.orcid812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.orcidf3759903-e615-46a5-8efa-11f3aef05ef3
dc.contributor.authorIllarionov, Yury
dc.contributor.authorBina, Markus
dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorRott, Karina
dc.contributor.authorKaczer, Ben
dc.contributor.authorReisinger, Hans
dc.contributor.authorGrasser, Tibor
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorKaczer, Ben
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2021-10-22T19:49:57Z
dc.date.available2021-10-22T19:49:57Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25412
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7194762
dc.source.beginpage2730
dc.source.endpage2737
dc.source.issue9
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume62
dc.title

Extraction of the lateral position of border traps in nanoscale MOSFETs

dc.typeJournal article
dspace.entity.typePublication
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