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Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

Date

2008
Journal article
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dc.contributor.authorSimoen, Eddy
dc.contributor.authorBrouwers, Gijs
dc.contributor.authorEneman, Geert
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorMitard, Jerome
dc.contributor.authorBrunco, David
dc.contributor.authorSouriau, Laurent
dc.contributor.authorCody, N.
dc.contributor.authorThomas, S.
dc.contributor.authorMeuris, Marc
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-17T10:44:14Z
dc.date.available2021-10-17T10:44:14Z
dc.date.issued2008
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/14468
dc.source.beginpage364
dc.source.endpage367
dc.source.issue5_6
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.volume11
dc.title

Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

dc.typeJournal article
dspace.entity.typePublication
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