Publication:

Novel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glass

Date

2015
Meeting abstract
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dc.contributor.authorSasaki, Yuichiro
dc.contributor.authorRitzenthaler, Romain
dc.contributor.authorKimura, Y.
dc.contributor.authorDe Roest, David
dc.contributor.authorShi, Xiaoping
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorKim, Min-Soo
dc.contributor.authorChew, Soon Aik
dc.contributor.authorKubicek, Stefan
dc.contributor.authorSchram, Tom
dc.contributor.authorKikuchi, Yoshiaki
dc.contributor.authorDemuynck, Steven
dc.contributor.authorVeloso, Anabela
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorMocuta, Dan
dc.contributor.authorMocuta, Anda
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorRitzenthaler, Romain
dc.contributor.imecauthorDe Roest, David
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorKim, Min-Soo
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorKikuchi, Yoshiaki
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecRitzenthaler, Romain::0000-0002-8615-3272
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecKim, Min-Soo::0000-0003-0211-0847
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned2021-10-22T22:34:42Z
dc.date.available2021-10-22T22:34:42Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25865
dc.source.beginpage596
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2015
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage599
dc.title

Novel junction design for NMOS Si bulk-FinFETs with extension doping by phosphorus doped silicate glass

dc.typeMeeting abstract
dspace.entity.typePublication
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