Publication:

Low-Temperature Dechlorosilylation Chemistry for Area-Selective Deposition of Ge2Sb2Te5 and Its Mechanism in Nanopatterns

 
dc.contributor.authorSinha, Jyoti
dc.contributor.authorGallis, Leonidas
dc.contributor.authorClerix, Jan-Willem
dc.contributor.authorvan der Veen, Marleen
dc.contributor.authorInnocent, Jerome
dc.contributor.authorIlliberi, Andrea
dc.contributor.authorGivens, Michael
dc.contributor.authorNyns, Laura
dc.contributor.authorDelabie, Annelies
dc.contributor.imecauthorSinha, Jyoti
dc.contributor.imecauthorGallis, Leonidas
dc.contributor.imecauthorvan der Veen, Marleen
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorClerix, Jan-Willem
dc.contributor.orcidimecSinha, Jyoti::0000-0003-4360-7657
dc.contributor.orcidimecvan der Veen, Marleen::0000-0002-9402-8922
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecDelabie, Annelies::0000-0001-9739-7419
dc.contributor.orcidimecClerix, Jan-Willem::0000-0002-2681-4569
dc.date.accessioned2024-09-25T11:53:15Z
dc.date.available2024-06-23T17:35:13Z
dc.date.available2024-09-25T11:53:15Z
dc.date.issued2024
dc.identifier.doi10.1021/acs.chemmater.4c00286
dc.identifier.issn0897-4756
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/44073
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage5943
dc.source.endpage5952
dc.source.issue12
dc.source.journalCHEMISTRY OF MATERIALS
dc.source.numberofpages10
dc.source.volume36
dc.subject.keywordsATOMIC LAYER DEPOSITION
dc.subject.keywordsPHASE-CHANGE MEMORY
dc.subject.keywordsTHIN-FILMS
dc.subject.keywordsGROWTH
dc.subject.keywordsNANOPARTICLES
dc.subject.keywordsNUCLEATION
dc.subject.keywordsRUTHENIUM
dc.subject.keywordsIMPACT
dc.subject.keywordsGETE
dc.title

Low-Temperature Dechlorosilylation Chemistry for Area-Selective Deposition of Ge2Sb2Te5 and Its Mechanism in Nanopatterns

dc.typeJournal article
dspace.entity.typePublication
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