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Optimization of scatterometry parameters for the gate level of the 90nm node

Date

2005
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-1086-270X
cris.virtualsource.departmentf9ae71b7-6a7c-4af7-9261-89511f8785c1
cris.virtualsource.orcidf9ae71b7-6a7c-4af7-9261-89511f8785c1
dc.contributor.authorLeray, Philippe
dc.contributor.authorCheng, Shaunee
dc.contributor.imecauthorLeray, Philippe
dc.date.accessioned2021-10-16T02:51:38Z
dc.date.available2021-10-16T02:51:38Z
dc.date.embargo9999-12-31
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10767
dc.source.beginpage1402
dc.source.conferenceMetrology, Inspection, and Process Control for Microlithography XIX
dc.source.conferencedate27/02/2005
dc.source.conferencelocationSan Jose, CA USA
dc.source.endpage1412
dc.title

Optimization of scatterometry parameters for the gate level of the 90nm node

dc.typeProceedings paper
dspace.entity.typePublication
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