Publication:

Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance

Date

2009
Proceedings Paper
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cris.virtual.orcid0000-0002-2174-6958
cris.virtual.orcid0000-0002-8062-3165
cris.virtual.orcid0000-0002-5218-4046
cris.virtualsource.departmentb3deff2d-4f77-4eb4-ac92-b9578c55d699
cris.virtualsource.departmentc807a03a-358d-4274-b622-dee889a60454
cris.virtualsource.department715a9ada-0798-46d2-a8ca-4775db9a8e46
cris.virtualsource.orcidb3deff2d-4f77-4eb4-ac92-b9578c55d699
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cris.virtualsource.orcid715a9ada-0798-46d2-a8ca-4775db9a8e46
dc.contributor.authorRodrigues, Michele
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorSimoen, Eddy
dc.contributor.authorCollaert, Nadine
dc.contributor.authorClaeys, Cor
dc.contributor.authorMartino, J.A.
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-18T02:18:51Z
dc.date.available2021-10-18T02:18:51Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16112
dc.source.beginpage189
dc.source.conference10th International Conference on Ultimate Integration of Silicon - ULIS
dc.source.conferencedate18/03/2009
dc.source.conferencelocationAachen Germany
dc.source.endpage192
dc.title

Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance

dc.typeProceedings paper
dspace.entity.typePublication
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