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Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge
Publication:
Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge
Date
2008
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Yu, Hong-Yu
;
Chang, Shou-Zen
;
Aoulaiche, Marc
;
Wang, Xin Peng
;
Adelmann, Christoph
;
Kaczer, Ben
;
Absil, Philippe
;
Lauwers, Anne
;
Biesemans, Serge
Journal
Applied Physics Letters
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1927
since deposited on 2021-10-17
Acq. date: 2025-10-24
Citations
Metrics
Views
1927
since deposited on 2021-10-17
Acq. date: 2025-10-24
Citations