Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge

dc.contributor.author	Yu, Hong-Yu
dc.contributor.author	Chang, Shou-Zen
dc.contributor.author	Aoulaiche, Marc
dc.contributor.author	Wang, Xin Peng
dc.contributor.author	Adelmann, Christoph
dc.contributor.author	Kaczer, Ben
dc.contributor.author	Absil, Philippe
dc.contributor.author	Lauwers, Anne
dc.contributor.author	Biesemans, Serge
dc.contributor.imecauthor	Adelmann, Christoph
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.imecauthor	Absil, Philippe
dc.contributor.imecauthor	Lauwers, Anne
dc.contributor.imecauthor	Biesemans, Serge
dc.contributor.orcidimec	Adelmann, Christoph::0000-0002-4831-3159
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.date.accessioned	2021-10-17T13:04:11Z
dc.date.available	2021-10-17T13:04:11Z
dc.date.issued	2008
dc.identifier.issn	0003-6951
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/14827
dc.identifier.url	http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000093000026263502000001&idtype=cvips&gifs=Yes
dc.source.beginpage	263502
dc.source.issue	26
dc.source.journal	Applied Physics Letters
dc.source.volume	93
dc.title	Transistor threshold voltage modulation by Dy2O3 rare-earth oxide capping: The role of bulk dielectrics charge
dc.type	Journal article
dspace.entity.type	Publication
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