Publication:

TiN metal hardmask etch residues removal on advanced porous low-k and Cu device with corner rounding scheme

Date

2010
Meeting abstract
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0009-0007-6964-7434
cris.virtual.orcid0000-0002-6650-5947
cris.virtualsource.department3e15c10a-8884-477b-b40c-a6ff454aa560
cris.virtualsource.department70b621e5-1a69-4904-836f-67dc160336fe
cris.virtualsource.orcid3e15c10a-8884-477b-b40c-a6ff454aa560
cris.virtualsource.orcid70b621e5-1a69-4904-836f-67dc160336fe
dc.contributor.authorCui, Hua
dc.contributor.authorClaes, Martine
dc.contributor.authorSuhard, Samuel
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorSuhard, Samuel
dc.date.accessioned2021-10-18T15:44:11Z
dc.date.available2021-10-18T15:44:11Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16922
dc.source.beginpage178
dc.source.conference10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS
dc.source.conferencedate19/09/2010
dc.source.conferencelocationOostende Belgium
dc.source.endpage179
dc.title

TiN metal hardmask etch residues removal on advanced porous low-k and Cu device with corner rounding scheme

dc.typeMeeting abstract
dspace.entity.typePublication
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