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Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs
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Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs
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Date
2012
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Franco, Jacopo
;
Kaczer, Ben
;
Toledano Luque, Maria
;
Bukhori, Muhammad Faiz
;
Roussel, Philippe
;
Grasser, Tibor
;
Asenov, Asen
;
Groeseneken, Guido
Journal
IEEE Electron Device Letters
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1874
since deposited on 2021-10-20
1
last month
Acq. date: 2026-01-25
Citations