Publication:
Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs
Date
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | 0000-0003-3763-2098 | |
| cris.virtual.orcid | 0000-0002-0402-8225 | |
| cris.virtual.orcid | 0000-0002-1484-4007 | |
| cris.virtual.orcid | 0000-0002-7382-8605 | |
| cris.virtualsource.department | 2fcc3f32-b96b-4ece-a34c-e0dd87c237c9 | |
| cris.virtualsource.department | f2e648b4-91e6-42de-bb5d-66326414095e | |
| cris.virtualsource.department | 812f2909-a81b-4593-9b32-75331cffa35c | |
| cris.virtualsource.department | 54f24b6a-b745-4c59-a5bc-058756e94864 | |
| cris.virtualsource.orcid | 2fcc3f32-b96b-4ece-a34c-e0dd87c237c9 | |
| cris.virtualsource.orcid | f2e648b4-91e6-42de-bb5d-66326414095e | |
| cris.virtualsource.orcid | 812f2909-a81b-4593-9b32-75331cffa35c | |
| cris.virtualsource.orcid | 54f24b6a-b745-4c59-a5bc-058756e94864 | |
| dc.contributor.author | Franco, Jacopo | |
| dc.contributor.author | Kaczer, Ben | |
| dc.contributor.author | Toledano Luque, Maria | |
| dc.contributor.author | Bukhori, Muhammad Faiz | |
| dc.contributor.author | Roussel, Philippe | |
| dc.contributor.author | Grasser, Tibor | |
| dc.contributor.author | Asenov, Asen | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.imecauthor | Franco, Jacopo | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.imecauthor | Roussel, Philippe | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.orcidimec | Franco, Jacopo::0000-0002-7382-8605 | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.contributor.orcidimec | Roussel, Philippe::0000-0002-0402-8225 | |
| dc.date.accessioned | 2021-10-20T11:04:06Z | |
| dc.date.available | 2021-10-20T11:04:06Z | |
| dc.date.embargo | 9999-12-31 | |
| dc.date.issued | 2012 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/20691 | |
| dc.source.beginpage | 779 | |
| dc.source.endpage | 781 | |
| dc.source.issue | 6 | |
| dc.source.journal | IEEE Electron Device Letters | |
| dc.source.volume | 33 | |
| dc.title | Impact of individual charged gate oxide defects on the entire ID-VG characteristic of nanoscaled FETs | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | Original bundle
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| Publication available in collections: |