Publication:

EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing

 
dc.contributor.authorDinh, Cong Que
dc.contributor.authorNagahara, Seiji
dc.contributor.authorKuwahara, Yuhei
dc.contributor.authorDauendorffer, Arnaud
dc.contributor.authorYoshida, Keisuke
dc.contributor.authorOkada, Soichiro
dc.contributor.authorOnitsuka, Tomoya
dc.contributor.authorKawakami, Shinichiro
dc.contributor.authorShimura, Satoru
dc.contributor.authorMuramatsu, Makoto
dc.contributor.authorYoshihara, Kosuke
dc.contributor.authorPetersen, John
dc.contributor.authorDe Simone, Danilo
dc.contributor.authorFoubert, Philippe
dc.contributor.authorVandenberghe, Geert
dc.contributor.authorHuli, Lior
dc.contributor.authorGrzeskowiak, Steven
dc.contributor.authorKrawicz, Alexandra
dc.contributor.authorBae, Nayoung
dc.contributor.authorKato, Kanzo
dc.contributor.imecauthorPetersen, John
dc.contributor.imecauthorDe Simone, Danilo
dc.contributor.imecauthorFoubert, Philippe
dc.contributor.imecauthorVandenberghe, Geert
dc.contributor.orcidimecDe Simone, Danilo::0000-0003-3927-5207
dc.date.accessioned2023-05-25T12:36:56Z
dc.date.available2023-04-30T04:07:33Z
dc.date.available2023-05-25T12:36:56Z
dc.date.embargo9999-12-31
dc.date.issued2022
dc.identifier.doi10.2494/photopolymer.35.87
dc.identifier.issn0914-9244
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41520
dc.publisherTECHNICAL ASSOC PHOTOPOLYMERS,JAPAN
dc.source.beginpage87
dc.source.endpage93
dc.source.issue1
dc.source.journalJOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY
dc.source.numberofpages7
dc.source.volume35
dc.title

EUV Metal Oxide Resist Development Technology for Improved Sensitivity, Roughness and Pattern Collapse Margin for High Volume Manufacturing

dc.typeJournal article
dspace.entity.typePublication
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