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Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
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Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
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Date
2015
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Lin, Dennis
;
Asselberghs, Inge
;
Vais, Abhitosh
;
Arutchelvan, G.
;
Delabie, Annelies
;
Heyns, Marc
;
Mocuta, Anda
;
Radu, Iuliana
;
Thean, Aaron
Journal
Microelectronic Engineering
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1963
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Acq. date: 2025-12-15
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Views
1963
since deposited on 2021-10-22
2
last month
2
last week
Acq. date: 2025-12-15
Citations