Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors

dc.contributor.author	Lin, Dennis
dc.contributor.author	Asselberghs, Inge
dc.contributor.author	Vais, Abhitosh
dc.contributor.author	Arutchelvan, G.
dc.contributor.author	Delabie, Annelies
dc.contributor.author	Heyns, Marc
dc.contributor.author	Mocuta, Anda
dc.contributor.author	Radu, Iuliana
dc.contributor.author	Thean, Aaron
dc.contributor.imecauthor	Lin, Dennis
dc.contributor.imecauthor	Asselberghs, Inge
dc.contributor.imecauthor	Vais, Abhitosh
dc.contributor.imecauthor	Delabie, Annelies
dc.contributor.imecauthor	Heyns, Marc
dc.contributor.imecauthor	Radu, Iuliana
dc.contributor.imecauthor	Thean, Aaron
dc.contributor.orcidimec	Vais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimec	Radu, Iuliana::0000-0002-7230-7218
dc.date.accessioned	2021-10-22T20:37:17Z
dc.date.available	2021-10-22T20:37:17Z
dc.date.issued	2015
dc.identifier.issn	0167-9317
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/25564
dc.identifier.url	http://www.sciencedirect.com/science/article/pii/S0167931715003512
dc.source.beginpage	314
dc.source.endpage	317
dc.source.journal	Microelectronic Engineering
dc.source.volume	147
dc.title	Deducing the apparent flat-band position Vafb and the doping level of large area single layer graphene MOS capacitors
dc.type	Journal article
dspace.entity.type	Publication
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