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BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Publication:
BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology
Date
2017
Proceedings Paper
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Putcha, Vamsi
;
Franco, Jacopo
;
Vais, Abhitosh
;
Sioncke, Sonja
;
Kaczer, Ben
;
Xie, Qi
;
Calka, Pauline
;
Tang, Fu
;
Jiang, Xiaoqiang
;
Givens, Michael
;
Collaert, Nadine
;
Linten, Dimitri
;
Groeseneken, Guido
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1995
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations
Metrics
Views
1995
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations