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BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology

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dc.contributor.authorPutcha, Vamsi
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVais, Abhitosh
dc.contributor.authorSioncke, Sonja
dc.contributor.authorKaczer, Ben
dc.contributor.authorXie, Qi
dc.contributor.authorCalka, Pauline
dc.contributor.authorTang, Fu
dc.contributor.authorJiang, Xiaoqiang
dc.contributor.authorGivens, Michael
dc.contributor.authorCollaert, Nadine
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorCalka, Pauline
dc.contributor.imecauthorGivens, Michael
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-24T11:33:02Z
dc.date.available2021-10-24T11:33:02Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29233
dc.source.beginpageXT-8.1
dc.source.conferenceIEEE International Reliability Physics Symposium - IRPS
dc.source.conferencedate2/04/2017
dc.source.conferencelocationMonterey, CA USA
dc.source.endpageXT-8.6
dc.title

BTI Reliability of InGaAs nMOS gate-stack: on the impact of shallow and deep defect bands on the operating voltage range of III-V technology

dc.typeProceedings paper
dspace.entity.typePublication
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