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Ultra thin oxide reliability : effects of gate doping concentration and poly-Si.SiO2 interface stress relaxation
Publication:
Ultra thin oxide reliability : effects of gate doping concentration and poly-Si.SiO2 interface stress relaxation
Date
1996
Proceedings Paper
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1639.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wristers, D.
;
Wang, Hui
;
De Wolf, Ingrid
;
Han, L. K.
;
Kwong, D. L.
;
Fulford, J.
Journal
Abstract
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1920
since deposited on 2021-09-29
428
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1920
since deposited on 2021-09-29
428
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations