Ultra thin oxide reliability : effects of gate doping concentration and poly-Si.SiO2 interface stress relaxation

cris.virtual.department	#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid	0000-0003-3822-5953
cris.virtualsource.department	99f46578-0b77-4a3f-b8e5-a6879cd2ea9a
cris.virtualsource.orcid	99f46578-0b77-4a3f-b8e5-a6879cd2ea9a
dc.contributor.author	Wristers, D.
dc.contributor.author	Wang, Hui
dc.contributor.author	De Wolf, Ingrid
dc.contributor.author	Han, L. K.
dc.contributor.author	Kwong, D. L.
dc.contributor.author	Fulford, J.
dc.contributor.imecauthor	De Wolf, Ingrid
dc.date.accessioned	2021-09-29T15:54:40Z
dc.date.available	2021-09-29T15:54:40Z
dc.date.embargo	9999-12-31
dc.date.issued	1996
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1665
dc.source.beginpage	77
dc.source.conference	International Reliability Physics Symposium - IRPS
dc.source.conferencedate	29/04/1996
dc.source.conferencelocation	Dallas, TX USA
dc.source.endpage	83
dc.title	Ultra thin oxide reliability : effects of gate doping concentration and poly-Si.SiO2 interface stress relaxation
dc.type	Proceedings paper
dspace.entity.type	Publication
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