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ALD growth behavior of high-k nanolayers on various substrates characterized by X-Ray Spectrometry in gracing incidence geometry

Date

2013
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-9739-7419
cris.virtualsource.department36689418-e07f-4cc4-8c33-f09792001dfb
cris.virtualsource.orcid36689418-e07f-4cc4-8c33-f09792001dfb
dc.contributor.authorMüller, Matthias
dc.contributor.authorSioncke, Sonja
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBeckhoff, Burkhard
dc.contributor.imecauthorDelabie, Annelies
dc.date.accessioned2021-10-21T10:13:59Z
dc.date.available2021-10-21T10:13:59Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22830
dc.source.beginpage95
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XI - UCPSS
dc.source.conferencedate17/09/2012
dc.source.conferencelocationGent Belgium
dc.source.endpage97
dc.title

ALD growth behavior of high-k nanolayers on various substrates characterized by X-Ray Spectrometry in gracing incidence geometry

dc.typeProceedings paper
dspace.entity.typePublication
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