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Dry etch of Yb-doped poly-Si gates for low Vt FUSI devices

Date

2007
Proceedings Paper
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dc.contributor.authorDemand, Marc
dc.contributor.authorParaschiv, Vasile
dc.contributor.authorShamiryan, Denis
dc.contributor.authorVrancken, Christa
dc.contributor.authorBrus, Stephan
dc.contributor.authorVeloso, Anabela
dc.contributor.authorBoullart, Werner
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorParaschiv, Vasile
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-16T15:45:33Z
dc.date.available2021-10-16T15:45:33Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12042
dc.source.conferencePlasma Etch and Strip in Microelectronics
dc.source.conferencedate10/09/2007
dc.source.conferencelocationLeuven Belgium
dc.title

Dry etch of Yb-doped poly-Si gates for low Vt FUSI devices

dc.typeProceedings paper
dspace.entity.typePublication
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