Publication:

Impact of the device geometric parameters on hot-carrier degradation in FinFETs

Date

2018
Journal article
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dc.contributor.authorTyaginov, Stanislav
dc.contributor.authorMakarov, Alexander
dc.contributor.authorKaczer, Ben
dc.contributor.authorJech, Markus
dc.contributor.authorVaisman Chasin, Adrian
dc.contributor.authorGrill, Alexander
dc.contributor.authorHellings, Geert
dc.contributor.authorVexler, Mikhail
dc.contributor.authorLinten, Dimitri
dc.contributor.authorGrasser, Tibor
dc.contributor.imecauthorTyaginov, Stanislav
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorVaisman Chasin, Adrian
dc.contributor.imecauthorGrill, Alexander
dc.contributor.imecauthorHellings, Geert
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecVaisman Chasin, Adrian::0000-0002-9940-0260
dc.contributor.orcidimecGrill, Alexander::0000-0003-1615-1033
dc.contributor.orcidimecHellings, Geert::0000-0002-5376-2119
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.date.accessioned2021-10-26T06:07:26Z
dc.date.available2021-10-26T06:07:26Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.issn1063-7826
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31987
dc.identifier.urlhttps://link.springer.com/article/10.1134/S1063782618130183
dc.source.beginpage1738
dc.source.endpage1742
dc.source.issue13
dc.source.journalSemiconductors
dc.source.volume52
dc.title

Impact of the device geometric parameters on hot-carrier degradation in FinFETs

dc.typeJournal article
dspace.entity.typePublication
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