Publication:

Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON

Date

2005
Proceedings Paper
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Author(s)

Yu, HongYu
;
Singanamalla, Raghunath
;
Opsomer, Karl  
;
Augendre, Emmanuel
;
Simoen, Eddy  
;
Kittl, Jorge
;
Kubicek, Stefan  
;
Severi, Simone  
;
Shi, Xiaoping
;
Brus, Stephan  
;
Zhao, Chao
;
de Marneffe, Jean-Francois  
;
Locorotondo, Sabrina  
;
Shamiryan, Denis
;
Van Dal, Mark  
;
Veloso, Anabela  
;
Lauwers, Anne  
;
Niwa, Masaaki
;
Maex, Karen  
;
De Meyer, Kristin  
;
Absil, Philippe  
;
Jurczak, Gosia  
;
Biesemans, Serge  

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