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Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON

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dc.contributor.authorYu, HongYu
dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorOpsomer, Karl
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorSimoen, Eddy
dc.contributor.authorKittl, Jorge
dc.contributor.authorKubicek, Stefan
dc.contributor.authorSeveri, Simone
dc.contributor.authorShi, Xiaoping
dc.contributor.authorBrus, Stephan
dc.contributor.authorZhao, Chao
dc.contributor.authorde Marneffe, Jean-Francois
dc.contributor.authorLocorotondo, Sabrina
dc.contributor.authorShamiryan, Denis
dc.contributor.authorVan Dal, Mark
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLauwers, Anne
dc.contributor.authorNiwa, Masaaki
dc.contributor.authorMaex, Karen
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorOpsomer, Karl
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorde Marneffe, Jean-Francois
dc.contributor.imecauthorLocorotondo, Sabrina
dc.contributor.imecauthorVan Dal, Mark
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorMaex, Karen
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-16T07:24:58Z
dc.date.available2021-10-16T07:24:58Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11598
dc.source.beginpage27/05/2001
dc.source.conferenceTechnical Digest International Electron Devices Meeting (IEDM)
dc.source.conferencedate5/12/2005
dc.source.conferencelocationWashington, D.C. USA
dc.source.endpage27/05/2004
dc.title

Demonstration of Ni fully GermanoSilicide as a pFET gate electrode candidate on HfSiON

dc.typeProceedings paper
dspace.entity.typePublication
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