Publication:

Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's

Date

2021
Journal article
https://doi.org/10.1109/TDMR.2021.3077876
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Author(s)

Jung, Taehwan  
;
O'Sullivan, Barry J.
;
Ronchi, Nicolo  
;
Linten, Dimitri  
;
Shin, Changhwan
;
Van Houdt, Jan  

Journal

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

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1830 since deposited on 2021-11-02
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Acq. date: 2026-03-17

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