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Articles
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
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Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
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Date
2021
Journal article
https://doi.org/10.1109/TDMR.2021.3077876
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Jung, Taehwan
;
O'Sullivan, Barry J.
;
Ronchi, Nicolo
;
Linten, Dimitri
;
Shin, Changhwan
;
Van Houdt, Jan
Journal
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
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1827
since deposited on 2021-11-02
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Acq. date: 2026-01-08
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Metrics
Views
1827
since deposited on 2021-11-02
1
last month
Acq. date: 2026-01-08
Citations