Publication:
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
| dc.contributor.author | Jung, Taehwan | |
| dc.contributor.author | O'Sullivan, Barry J. | |
| dc.contributor.author | Ronchi, Nicolo | |
| dc.contributor.author | Linten, Dimitri | |
| dc.contributor.author | Shin, Changhwan | |
| dc.contributor.author | Van Houdt, Jan | |
| dc.contributor.imecauthor | Jung, Taehwan | |
| dc.contributor.imecauthor | O'Sullivan, Barry J. | |
| dc.contributor.imecauthor | Ronchi, Nicolo | |
| dc.contributor.imecauthor | Linten, Dimitri | |
| dc.contributor.imecauthor | Van Houdt, Jan | |
| dc.contributor.orcidext | Shin, Changhwan::0000-0001-6057-3773 | |
| dc.contributor.orcidimec | Jung, Taehwan::0000-0001-5655-9901 | |
| dc.contributor.orcidimec | Ronchi, Nicolo::0000-0002-7961-4077 | |
| dc.contributor.orcidimec | Linten, Dimitri::0000-0001-8434-1838 | |
| dc.contributor.orcidimec | Van Houdt, Jan::0000-0003-1381-6925 | |
| dc.contributor.orcidimec | Van Houdt, Jan::1234-1234-1234-1235 | |
| dc.date.accessioned | 2022-02-03T11:24:38Z | |
| dc.date.available | 2021-11-02T16:01:13Z | |
| dc.date.available | 2022-02-03T11:24:38Z | |
| dc.date.issued | 2021 | |
| dc.identifier.doi | 10.1109/TDMR.2021.3077876 | |
| dc.identifier.issn | 1530-4388 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/37878 | |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | |
| dc.source.beginpage | 176 | |
| dc.source.endpage | 182 | |
| dc.source.issue | 2 | |
| dc.source.journal | IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | |
| dc.source.numberofpages | 7 | |
| dc.source.volume | 21 | |
| dc.subject.keywords | HAFNIUM OXIDE | |
| dc.subject.keywords | MEMORY WINDOW | |
| dc.title | Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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