Publication:

Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics

Date

1996
Meeting abstract
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-7116-7498
cris.virtualsource.departmente97c04b9-4d2d-4488-b89a-1fbc84127a87
cris.virtualsource.orcide97c04b9-4d2d-4488-b89a-1fbc84127a87
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorKissinger, G.
dc.contributor.authorKenis, Karine
dc.contributor.authorDepas, Michel
dc.contributor.authorGräf, D.
dc.contributor.authorLambert, U.
dc.contributor.authorWagner, P.
dc.contributor.imecauthorKenis, Karine
dc.date.accessioned2021-09-29T15:45:01Z
dc.date.available2021-09-29T15:45:01Z
dc.date.embargo9999-12-31
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1612
dc.source.conferenceBelgische Natuurkundige Vereniging. Algemene Wetenschappelijke Vergadering
dc.source.conferencedate6/06/1996
dc.source.conferencelocationBrussel Belgium
dc.title

Correlation between grown-in silicon substrate defects and silicon gate oxide breakdown characteristics

dc.typeMeeting abstract
dspace.entity.typePublication
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