Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation

Duan, N.; Luo, J.; Wang, G.; Liu, J.; Simoen, Eddy; Mao, S.; Radamson, H.; Wang, X.; Li, J.; Wang, W.; Zhao, C.; Ye, T.

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Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation

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2016

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IEEE Transactions on Electron Devices

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Acq. date: 2026-08-03

Reduction of NiGe/n- and p-Ge specific contact resistivity by enhanced dopant segregation in the presence of carbon during nickel germanidation

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