Publication:
Analysis of temperature-induced saturation threshold voltage degradation in deep-submicron ultrathin SOI MOSFETs
Date
| dc.contributor.author | Pavanello, M.A. | |
| dc.contributor.author | Martino, J.A. | |
| dc.contributor.author | Simoen, Eddy | |
| dc.contributor.author | Claeys, Cor | |
| dc.contributor.imecauthor | Simoen, Eddy | |
| dc.contributor.orcidimec | Simoen, Eddy::0000-0002-5218-4046 | |
| dc.date.accessioned | 2021-10-16T04:01:09Z | |
| dc.date.available | 2021-10-16T04:01:09Z | |
| dc.date.issued | 2005 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11006 | |
| dc.source.beginpage | 2236 | |
| dc.source.endpage | 2242 | |
| dc.source.issue | 10 | |
| dc.source.journal | IEEE Trans. Electron Devices | |
| dc.source.volume | 52 | |
| dc.title | Analysis of temperature-induced saturation threshold voltage degradation in deep-submicron ultrathin SOI MOSFETs | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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