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A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

Date

2009-03
Journal article
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dc.contributor.authorWang, Gang
dc.contributor.authorLoo, Roger
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSouriau, Laurent
dc.contributor.authorCaymax, Matty
dc.contributor.authorHeyns, Marc
dc.contributor.authorBlanpain, Bart
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorSouriau, Laurent
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecSouriau, Laurent::0000-0002-5138-5938
dc.date.accessioned2021-10-18T05:06:37Z
dc.date.available2021-10-18T05:06:37Z
dc.date.embargo9999-12-31
dc.date.issued2009-03
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16518
dc.source.beginpage102115
dc.source.issue10
dc.source.journalApplied Physics Letters
dc.source.volume94
dc.title

A model of threading dislocation density in strain-relaxed Ge and GaAs epitaxial films on Si (100)

dc.typeJournal article
dspace.entity.typePublication
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