Publication:

A novel resist and post-etch residue removal process using ozonated chemistries

Date

1998
Proceedings Paper
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dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorSnee, Peter
dc.contributor.authorCornelissen, Ingrid
dc.contributor.authorLux, Marcel
dc.contributor.authorVos, Rita
dc.contributor.authorMertens, Paul
dc.contributor.authorKnotter, D. M.
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCornelissen, Ingrid
dc.contributor.imecauthorLux, Marcel
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-09-30T11:41:30Z
dc.date.available2021-09-30T11:41:30Z
dc.date.embargo9999-12-31
dc.date.issued1998
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/2491
dc.source.beginpage168
dc.source.conferenceIEEE VLSI Technology Symposium
dc.source.conferencedate9/09/1998
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage169
dc.title

A novel resist and post-etch residue removal process using ozonated chemistries

dc.typeProceedings paper
dspace.entity.typePublication
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