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Stress simulations of Si- and Ge-channel FinFETs for the 14 nm-node and beyond
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Stress simulations of Si- and Ge-channel FinFETs for the 14 nm-node and beyond
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Date
2013
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Eneman, Geert
;
Brunco, David
;
Witters, Liesbeth
;
Vincent, Benjamin
;
Favia, Paola
;
Hikavyy, Andriy
;
De Keersgieter, An
;
Mitard, Jerome
;
Loo, Roger
;
Veloso, Anabela
;
Richard, Olivier
;
Bender, Hugo
;
Vandervorst, Wilfried
;
Caymax, Matty
;
Horiguchi, Naoto
;
Collaert, Nadine
;
Thean, Aaron
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Views
1820
since deposited on 2021-10-21
1
last month
1
last week
Acq. date: 2025-12-15
Citations