Publication:

Stress simulations of Si- and Ge-channel FinFETs for the 14 nm-node and beyond

Date

2013
Proceedings Paper
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dc.contributor.authorEneman, Geert
dc.contributor.authorBrunco, David
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorVincent, Benjamin
dc.contributor.authorFavia, Paola
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorMitard, Jerome
dc.contributor.authorLoo, Roger
dc.contributor.authorVeloso, Anabela
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorCaymax, Matty
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorVincent, Benjamin
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-21T07:29:37Z
dc.date.available2021-10-21T07:29:37Z
dc.date.embargo9999-12-31
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/22311
dc.source.beginpage225
dc.source.conferenceGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
dc.source.conferencedate12/05/2013
dc.source.conferencelocationToronto Canada
dc.source.endpage236
dc.title

Stress simulations of Si- and Ge-channel FinFETs for the 14 nm-node and beyond

dc.typeProceedings paper
dspace.entity.typePublication
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