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Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 Å EOT HfO2 n-MOSFETs
Publication:
Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 Å EOT HfO2 n-MOSFETs
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Date
2010
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21477.pdf
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
O'Connor, Robert
;
Kauerauf, Thomas
;
Ragnarsson, Lars-Ake
;
Hughes, Greg
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since deposited on 2021-10-18
Acq. date: 2025-12-11
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1901
since deposited on 2021-10-18
Acq. date: 2025-12-11
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Downloads
1
since deposited on 2021-10-18
Acq. date: 2025-12-11
Views
1901
since deposited on 2021-10-18
Acq. date: 2025-12-11
Citations