Publication:

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 Å EOT HfO2 n-MOSFETs

Date

2010
Proceedings Paper
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-1057-8140
cris.virtualsource.departmentee7e6e4c-3b87-41b4-9995-a519c69c638e
cris.virtualsource.orcidee7e6e4c-3b87-41b4-9995-a519c69c638e
dc.contributor.authorO'Connor, Robert
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorHughes, Greg
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.date.accessioned2021-10-18T19:45:41Z
dc.date.available2021-10-18T19:45:41Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17722
dc.source.beginpage799
dc.source.conference48th Annual International Reliability Physics Symposium - IRPS
dc.source.conferencedate3/05/2010
dc.source.conferencelocationAnaheim, CA USA
dc.source.endpage803
dc.title

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8 Å EOT HfO2 n-MOSFETs

dc.typeProceedings paper
dspace.entity.typePublication
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