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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors
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Date
2015
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wu, Tian-Li
;
Marcon, Denis
;
Bakeroot, Benoit
;
De Jaeger, Brice
;
Lin, Dennis
;
Franco, Jacopo
;
Stoffels, Steve
;
Van Hove, Marleen
;
Groeseneken, Guido
;
Decoutere, Stefaan
Journal
Applied Physics Letters
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1965
since deposited on 2021-10-23
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last month
Acq. date: 2025-12-10
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Metrics
Views
1965
since deposited on 2021-10-23
1
last month
Acq. date: 2025-12-10
Citations