Publication:

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Date

2015
Journal article
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dc.contributor.authorWu, Tian-Li
dc.contributor.authorMarcon, Denis
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorLin, Dennis
dc.contributor.authorFranco, Jacopo
dc.contributor.authorStoffels, Steve
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-23T01:08:37Z
dc.date.available2021-10-23T01:08:37Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26191
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/apl/107/9/10.1063/1.4930076
dc.source.beginpage93507
dc.source.issue9
dc.source.journalApplied Physics Letters
dc.source.volume107
dc.title

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

dc.typeJournal article
dspace.entity.typePublication
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