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Scaling of Hf-based gate dielectrics - integration with polysilicon gates

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dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorCaymax, Matty
dc.contributor.authorChen, Jerry
dc.contributor.authorClaes, Martine
dc.contributor.authorConard, Thierry
dc.contributor.authorDelabie, Annelies
dc.contributor.authorDeweerd, Wim
dc.contributor.authorKaushik, Vidya
dc.contributor.authorKerber, Andreas
dc.contributor.authorKubicek, Stefan
dc.contributor.authorNiwa, Masaaki
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPuurunen, Riikka
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorSchram, Tom
dc.contributor.authorShimamoto, Yasuhiro
dc.contributor.authorTsai, Wilman
dc.contributor.authorRöhr, Erika
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorWitters, Thomas
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorClaes, Martine
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorWitters, Thomas
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-15T04:18:17Z
dc.date.available2021-10-15T04:18:17Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7404
dc.source.conference204th Meeting of the Electrochemical Society: 2nd Int. Symp. on High Dielectric Constant Materials
dc.source.conferencedate13/10/2003
dc.source.conferencelocationOrlando, FL USA
dc.title

Scaling of Hf-based gate dielectrics - integration with polysilicon gates

dc.typeMeeting abstract
dspace.entity.typePublication
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