Publication:

Deep traps in In0.3Ga0.7As nFinFETs, studied by generation-recombination noise

Date

2017
Proceedings Paper
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dc.contributor.authorHe, Liang
dc.contributor.authorChen, H.
dc.contributor.authorGuo, D.D.
dc.contributor.authorHu, L.N.
dc.contributor.authorQin, Y.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorKunert, Bernardette
dc.contributor.authorWaldron, Niamh
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T05:32:34Z
dc.date.available2021-10-24T05:32:34Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/28475
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7985987/
dc.source.beginpage1
dc.source.conferenceInternational Conference on Noise and 1/f Fluctuations - ICNF
dc.source.conferencedate20/06/2017
dc.source.conferencelocationVilnius Lithuania
dc.source.endpage4
dc.title

Deep traps in In0.3Ga0.7As nFinFETs, studied by generation-recombination noise

dc.typeProceedings paper
dspace.entity.typePublication
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