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Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate
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Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate
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Date
2014
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Jiang, Sijia
;
Merckling, Clement
;
Guo, Weiming
;
Waldron, Niamh
;
Moussa, Alain
;
Caymax, Matty
;
Vandervorst, Wilfried
;
Seefeldt, Marc
;
Heyns, Marc
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1855
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Views
1855
since deposited on 2021-10-22
1
last month
Acq. date: 2025-12-11
Citations