Publication:

Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate

Date

2014
Meeting abstract
Simple item page Full metadata Statistics
 
dc.contributor.authorJiang, Sijia
dc.contributor.authorMerckling, Clement
dc.contributor.authorGuo, Weiming
dc.contributor.authorWaldron, Niamh
dc.contributor.authorMoussa, Alain
dc.contributor.authorCaymax, Matty
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorSeefeldt, Marc
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorWaldron, Niamh
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-22T02:21:47Z
dc.date.available2021-10-22T02:21:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24011
dc.source.conferenceECS and SMEQ Joint International Meeting
dc.source.conferencedate5/10/2014
dc.source.conferencelocationCancun Mexico
dc.title

Influence of trench width on III-V nucleation during InP selective area growth on pattern Si(001) substrate

dc.typeMeeting abstract
dspace.entity.typePublication
Files
Publication available in collections:
Conference contributions