Publication:

Analysis of junctions formed in strained Si/SiGe substrates

Date

2004
Proceedings Paper
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dc.contributor.authorEneman, Geert
dc.contributor.authorSimoen, Eddy
dc.contributor.authorLauwers, Anne
dc.contributor.authorLindsay, Richard
dc.contributor.authorVerheyen, Peter
dc.contributor.authorDelhougne, Romain
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeunier-Beillard, Philippe
dc.contributor.authorDemuynck, Steven
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorVandervorst, Wilfried
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorDelhougne, Romain
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-15T13:20:37Z
dc.date.available2021-10-15T13:20:37Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/8881
dc.source.beginpage187
dc.source.conferenceHigh-Mobility Group-IV Materials and Devices
dc.source.conferencedate12/04/2004
dc.source.conferencelocationSan Francisco USA
dc.source.endpage192
dc.title

Analysis of junctions formed in strained Si/SiGe substrates

dc.typeProceedings paper
dspace.entity.typePublication
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