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Area-selective atomic layer deposition of TiN, TiO2, and HfO2 for advanced thin film patterning by delayed nucleation on plasma-treated amorphous carbon

Date

2018
Meeting abstract
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dc.contributor.authorStevens, Eric
dc.contributor.authorTomczak, Yoann
dc.contributor.authorChan, BT
dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorParsons, Gregory
dc.contributor.authorDelabie, Annelies
dc.contributor.imecauthorTomczak, Yoann
dc.contributor.imecauthorChan, BT
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecChan, BT::0000-0003-2890-0388
dc.date.accessioned2021-10-26T04:42:07Z
dc.date.available2021-10-26T04:42:07Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/31857
dc.source.beginpage24
dc.source.conference3rd Area Selective Deposition Workshop - ASD
dc.source.conferencedate29/04/2018
dc.source.conferencelocationRaleigh, NC USA
dc.source.endpage24
dc.title

Area-selective atomic layer deposition of TiN, TiO2, and HfO2 for advanced thin film patterning by delayed nucleation on plasma-treated amorphous carbon

dc.typeMeeting abstract
dspace.entity.typePublication
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